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Multilayer ReSe2/MoS2 p–n heterojunctions

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We reported vertical heterojunctions based on multilayer exfoliated n-type hexagonal-structure MoS2 and p-type distorted CdCl2-structure ReSe2 nanoflakes. The (opto)electronics based on such heterojunctions are experimentally confirmed to possess preferable functionalities to single component ReSe2 or MoS2 devices, including obvious rectification, elevated electron mobility and on/off current ratio, and efficient photocurrent generation. The Vienna ab initio simulation package was employed to give a standard p–n junction arrangement for the ReSe2/MoS2 heterojunctions.

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