CNT FinFET can provide significant advantage in speed compared to Si FinFET, arising from its nearly thirty-times-larger current density. A suitable adjustment of Vth can effectively contribute to a significant suppression of power dissipation, and leads to an optimization on EDP. In particular it is demonstrated that CNT FinFET with optimized threshold voltage can provide about 50 times EDP advantage over Si FinFET, indicating huge developing room for CNT-based electronics.
↧
